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| SUR120120 Ultra Fast Recovery Epitaxial Diodes Dimensions TO-247AC A C(TAB) C A C Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 A=Anode, C=Cathode, TAB=Cathode VRSM V 1200 VRRM V 1200 SUR12060 Symbol IFRMS IFAVM IFRM Test Conditions TVJ=TVJM TC=60oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine Maximum Ratings 100 120 tbd 600 660 540 600 1800 1800 1450 1500 -40...+150 150 -40...+150 Unit A IFSM TVJ=150oC TVJ=45oC A I2t TVJ=150oC A2s TVJ TVJM Tstg Ptot Md Weight TC=25oC Mounting torque o C 357 0.8...1.2 6 W Nm g SUR120120 Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=70A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM Characteristic Values typ. max. 3 1.5 20 1.55 1.8 1.2 4.6 0.35 0.25 35 Unit uA uA mA V V m K/W IR VF VTO rT RthJC RthCK RthJA trr IRM IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC _ VR=350V; IF=75A; -diF/dt=200A/us; L<0.05uH; TVJ=100 C o 40 25 60 30 ns A FEATURES * International standard package JEDEC TO-247AC * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling SUR120120 Ultra Fast Recovery Epitaxial Diodes 150 A 125 IF 100 T V J =150C 16 T = 100C VJ C V = 600V R 14 Q r 12 10 8 T V J =100C I F =140A I F = 70A I F = 35A 120 T V J = 100C A V R = 600V 100 IR M 80 60 40 20 0 I F =140A I F = 70A I F = 35A 75 50 T V J = 25C 6 4 2 25 0 0.0 0.5 1.0 1.5 V 2.0 VF 0 100 A/ s 1000 -diF /dt 0 200 400 600 A/ s 1000 800 -diF /dt F ig. 1 F orward current I F vers us V F F ig. 2 R evers e recovery charge Q r vers us -diF /dt 500 ns 450 trr 400 350 300 T V J = 100C V R = 600V F ig. 3 P eak revers e current I R M vers us -diF /dt 60 V 50 V FR 40 tfr V FR T V J = 100C I F = 100A 1.4 1.5 s tfr 1.0 1.2 Kf 1.0 IR M 0.8 I F =140A I F = 70A I F = 35A 30 20 10 0 0.0 1000 A/ s 0.5 0.6 Qr 250 200 0.4 0 40 80 120 C 160 T VJ 0 200 400 600 A/ s 800 -diF /dt 1000 0 200 400 600 800 diF /dt F ig. 4 Dynamic parameters Q r, I R M vers us T VJ 1 K /W F ig. 5 R ecovery time trr vers us -diF /dt F ig. 6 P eak forward voltage V F R and tfr vers us diF /dt C ons tants for Z thJ C calculation: i R thi (K /W) 0.017 0.0184 0.1296 0.185 ti (s ) 0.00038 0.0026 0.0387 0.274 D=0.7 0.5 Z thJC 0.1 0.3 0.2 0.01 0.05 S ingle P ulse 1 2 3 4 0.01 0.001 DS E I 120-12 0.01 0.1 1s t 10 F ig. 7 T rans ient thermal res is tance junction to cas e |
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